• DocumentCode
    1651825
  • Title

    Change of acceleration behavior of time-dependent dielectric breakdown by the beol process: indications for hydrogen induced transition in dominant degradation mechanism

  • Author

    Pompl, T. ; Allers, K.-H. ; Schwab, R. ; Hofmann, K. ; Roehner, M.

  • Author_Institution
    Infineon Technol., Munich, Germany
  • fYear
    2005
  • Firstpage
    388
  • Lastpage
    397
  • Keywords
    MIS structures; electric breakdown; hydrogen; silicon compounds; temperature; thermal stability; H2; MOS technologies; SiO2; back end of line process; continuous hydrogen reaction model; degradation mechanism; hydrogen induced transition; negative bias temperature instability tests; silicon dioxide based gate dielectrics; time-dependent dielectric breakdown; Acceleration; Breakdown voltage; Degradation; Dielectric breakdown; Electric breakdown; Hydrogen; Niobium compounds; Semiconductor process modeling; Testing; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493118
  • Filename
    1493118
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651825