Title :
Reduction of the 1/f noise induced phase noise in a CMOS ring oscillator by increasing the amplitude of oscillation
Author :
Gierkink, S.L.J. ; van der Wel, A. ; Hoogzaad, G. ; Klumperink, E.A.M. ; van Tuijl, A.J.M.
Author_Institution :
MESA Res. Inst., Twente Univ., Enschede, Netherlands
Abstract :
Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseband
Keywords :
1/f noise; CMOS integrated circuits; feedback oscillators; integrated circuit noise; phase noise; 1/f noise induced phase noise; CMOS ring oscillator; carrier power independence; oscillation amplitude; periodically switched MOS transistors; phase noise reduction; Bandwidth; MOSFETs; Noise level; Noise measurement; Noise reduction; Phase locked loops; Phase measurement; Phase noise; Ring oscillators; Semiconductor device noise;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.704241
