Title :
A CMOS standard-process sensor
Author_Institution :
Telecommun. & Inf. Technol., “Gh. Asachi” Tech. Univ. of Iasi, Iasi, Romania
Abstract :
A CMOS circuit which generates a nearly constant voltage, with low sensitivity to temperature and supply voltage but strongly dependent on process variations is described. Detection of changes in the technological process is based on threshold voltage characteristics of a MOS transistor (i.e., the absolute values are significantly affected by the process but not the temperature coefficient, which remains almost constant). The output voltage of the process sensor ranges from 560 mV (fast-fast corner) to 1042 mV (slow-slow corner). The circuit is designed in 65 nm CMOS standard process and operates in the temperature range [-30, +130]°C with supply voltage from 2.2 V to 2.8 V (2.5 V nominal).
Keywords :
CMOS integrated circuits; MOSFET; CMOS circuit; CMOS standard-process sensor; MOS transistor; process variations; size 65 nm; temperature -30 degC to 130 degC; voltage 2.2 V to 2.8 V; voltage 560 mV to 1042 mV; CMOS integrated circuits; MOSFET; Resistors; Sensitivity; Temperature sensors; Threshold voltage;
Conference_Titel :
Signals, Circuits and Systems (ISSCS), 2015 International Symposium on
Conference_Location :
Iasi
Print_ISBN :
978-1-4673-7487-3
DOI :
10.1109/ISSCS.2015.7203928