• DocumentCode
    1651896
  • Title

    Reliability considerations of strained silicon on relaxed silicon-germanium (SiGe) substrate

  • Author

    Shih, J.R. ; Wu, Kenneth

  • Author_Institution
    Reliability Assurance Div., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
  • fYear
    2005
  • Firstpage
    403
  • Lastpage
    408
  • Keywords
    Ge-Si alloys; MOSFET; dislocations; interface states; semiconductor device reliability; silicon; stress effects; substrates; thermal stresses; I-V characteristics degradation; MOSFET; Si-SiGe; SiGe; high temperature; nMOSFET; negative bias temperature stress; pMOSFET; relaxed silicon-germanium substrate; reliability degradation; strain-induced misfit dislocations; strained silicon; substrate-induced donor-type interface state generation; Degradation; Electron mobility; Germanium silicon alloys; Human computer interaction; Interface states; MOSFETs; Semiconductor device reliability; Silicon germanium; Substrates; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493120
  • Filename
    1493120
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651896