Title :
Record-high electron mobility in Ge n-MOSFETs exceeding Si universality
Author :
Lee, C.H. ; Nishimura, T. ; Saido, N. ; Nagashio, K. ; Kita, K. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
We have demonstrated very high electron mobility in Ge n-MOSFETs which exceeds the universal one in Si-MOSFETs. The peak electron mobility on Ge n-MOSFETs is about 1100 cm2/Vsec in Al/GeO2/Ge stack. This has been achieved by taking care of Ge/GeO2 channel interface based on thermodynamic and kinetic control. Since it is clarified that the mobility is still limited by remaining scattering sources, the present results promise us to expect much higher performance Ge CMOS.
Keywords :
MOSFET; electron mobility; elemental semiconductors; germanium compounds; silicon; Al-GeO2-Ge; Ge; Ge n-MOSFET; Ge-GeO2; Si universality; Si-MOSFET; high electron mobility; kinetic control; thermodynamic control; Annealing; Capacitance-voltage characteristics; Degradation; Electron mobility; FETs; Fabrication; Hysteresis; MOSFET circuits; Temperature; Thermodynamics;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424323
