Analog and RF design issues in high-k & multi-gate CMOS technologies

Author

Fulde, M. ; Schmitt-Landsiedel, D. ; Knoblinger, G.

Author_Institution

Infineon Austria AG, Villach, Austria

fYear

2009

Firstpage

1

Lastpage

1

Abstract

High-k, metal gate devices and furthermore multi-gate FETs (MuGFETs) are considered as promising solution for scaling down to 32 nm, 22 nm and 16 nm overcoming the limitations of conventional planar bulk. Especially analog, mixed-signal and RF device and circuit performance is affected by these revolutionary changes in technology. This paper discusses different examples for novel, technology related design issues focused on analog, mixed-signal and RF applications.

Keywords

CMOS integrated circuits; analogue integrated circuits; field effect transistors; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; RF application; analog application; high-k CMOS; metal gate device; mixed-signal application; multigate CMOS technology; multigate FET; size 16 nm; size 22 nm; size 32 nm; CMOS technology; Circuits; Degradation; Error correction; High K dielectric materials; High-K gate dielectrics; Hysteresis; Phase locked loops; Radio frequency; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424326

Filename

5424326