• DocumentCode
    1652018
  • Title

    RF reliability subject to dynamic voltage stress in NMOS circuits

  • Author

    Yu, Chuanzhao ; Yuan, J.S.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
  • fYear
    2005
  • Firstpage
    431
  • Lastpage
    434
  • Keywords
    MOS analogue integrated circuits; MOSFET; integrated circuit reliability; power amplifiers; radiofrequency integrated circuits; semiconductor device models; semiconductor device reliability; NMOS circuits; NMOS transistor degradation; RF reliability; RFIC; dynamic voltage stress; hot carriers; linearity degradation; noise figure degradation; power amplifier; soft breakdown; Circuits; Cutoff frequency; Degradation; Electric breakdown; MOS devices; Noise figure; Radio frequency; Stress; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493124
  • Filename
    1493124
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652018