Design of a high-efficiency GaN HEMT RF power amplifier

Author

Yelin Wang ; Larsen, Torben

Author_Institution

Dept. of Electron. Syst., Aalborg Univ., Øst, Denmark

fYear

2015

Firstpage

1

Lastpage

4

Abstract

Highly efficient radio frequency power amplifiers are essential in modern wireless transmitter systems. This paper presents the analysis, design and simulation of a 2GHz high-efficiency class-J RF power amplifier for wireless communications. A commercially available RF power 6W Gallium Nitride high-electron-mobility transistor is used as the core of the amplifier. By optimizing the load impedance up to the third-order harmonic, the needed output voltage and current waveforms, which are desired according to the class-J operation mode, are realized. The simulated maximum power-added-efficiency reaches 77.1% with output power of 40.5dBm at input drive of 27 dBm. Through simulations it also shows that high efficiency is sustained during a bandwidth of 200-300 MHz.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; radiofrequency power amplifiers; wide band gap semiconductors; GaN; HEMT; RF power amplifier design; bandwidth 200 MHz to 300 MHz; efficiency 77.1 percent; frequency 2 GHz; gallium nitride; high-efficiency class-J RF power amplifier; high-electron-mobility transistor; power 6 W; power-added-efficiency; radio frequency power amplifier; wireless communication; wireless transmitter system; Gain; Gallium nitride; HEMTs; Harmonic analysis; Load modeling; Power generation; Radio frequency; GaN HEMT; Power amplifier; class-J; high efficiency; load-pull;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Circuits and Systems (ISSCS), 2015 International Symposium on

Conference_Location

Iasi

Print_ISBN

978-1-4673-7487-3

Type

conf

DOI

10.1109/ISSCS.2015.7203934

Filename

7203934