Title :
Lifetime study for a poly fuse in a 0.35μM polycide CMOS process
Author :
Fellner, Johannes ; Boesmueller, Peter ; Reiter, Heinz
Keywords :
CMOS memory circuits; PROM; electric fuses; integrated circuit reliability; 0.35 micron; Si-WSi; dual-layer construction; high reliability circuits; one time programmable cells; poly fuse lifetime stability; poly fuse resistance drift; polycide CMOS process; programming current; storage element; CMOS process; Electronic circuits; Fuses; Linear programming; Resistors; Silicides; Silicon; Temperature; Tungsten; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493126
