DocumentCode
1652046
Title
Lifetime study for a poly fuse in a 0.35μM polycide CMOS process
Author
Fellner, Johannes ; Boesmueller, Peter ; Reiter, Heinz
fYear
2005
Firstpage
446
Lastpage
449
Keywords
CMOS memory circuits; PROM; electric fuses; integrated circuit reliability; 0.35 micron; Si-WSi; dual-layer construction; high reliability circuits; one time programmable cells; poly fuse lifetime stability; poly fuse resistance drift; polycide CMOS process; programming current; storage element; CMOS process; Electronic circuits; Fuses; Linear programming; Resistors; Silicides; Silicon; Temperature; Tungsten; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493126
Filename
1493126
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