1652170

SiTD, Texas Instrum. Inc., Dallas, TX, USA

2005

466

473

dielectric measurement; dielectric thin films; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; semiconductor device breakdown; 0.12 to 0.16 eV; TDDB; apparent field acceleration parameter; constant-voltage time-dependent-dielectric-breakdown measurements; dual ramp rate voltage-ramp method; interconnect dielectric breakdown characteristics; interconnect dielectric reliability; low-k materials; metal line-to-line spacing; minimum line spacing; minimum line-to-line spacing distributions; multiple temperature breakdown methodology; organo-silicate materials; spacing-corrected breakdown field distributions; zero-field activation energy; Breakdown voltage; Dielectric breakdown; Dielectric constant; Dielectric films; Dielectric materials; Dielectrics and electrical insulation; Electric breakdown; Integrated circuit interconnections; Integrated circuit technology; Temperature dependence;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

10.1109/RELPHY.2005.1493130

1493130