A comparison of high frequency IC technologies for wireless LANs

Author

Reynolds, L. ; Katzin, P.

Author_Institution

Hittite Microwave Corp., Woburn, MA, USA

fYear

1992

Firstpage

42

Lastpage

46

Abstract

Commercially available high-frequency IC wafer fabrication processes are reviewed for their applicability to low-cost, high-performance RF front ends for emerging wireless LAN applications at 2.4 and 5.8 GHz. Wafer fabrication cost, yield, integration density, DC power consumption and electrical performance are compared for GaAs MESFET, GaAs heterostructure bipolar transition (HBT), GaAs high-electron-mobility transistor (HEMT), Si bipolar-junction transistor (BJT), and Si BiCMOS processes. Representative RF block diagrams and key performance and interface requirements are discussed. Applicable FCC regulations, modulation methods, and chip packaging issues are summarized

Keywords

BiCMOS integrated circuits; MMIC; Schottky gate field effect transistors; bipolar integrated circuits; field effect integrated circuits; high electron mobility transistors; integrated circuit technology; local area networks; 2.4 GHz; 5.8 GHz; BiCMOS processes; DC power consumption; FCC regulations; GaAs; HEMT; MESFET; MMIC; RF front ends; Si; bipolar-junction transistor; chip packaging; electrical performance; fabrication cost; heterostructure bipolar transition; high-electron-mobility transistor; high-frequency IC wafer fabrication; integration density; modulation methods; wireless LAN; yield; Application specific integrated circuits; Costs; Energy consumption; Fabrication; Gallium arsenide; HEMTs; MESFETs; Radio frequency; Radiofrequency integrated circuits; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless LAN Implementation, 1992. Proceedings., IEEE Conference on

Conference_Location

Dayton, OH

Print_ISBN

0-8186-2625-9

Type

conf

DOI

10.1109/CWLAN.1992.275719

Filename

275719