Title :
A comparison of high frequency IC technologies for wireless LANs
Author :
Reynolds, L. ; Katzin, P.
Author_Institution :
Hittite Microwave Corp., Woburn, MA, USA
Abstract :
Commercially available high-frequency IC wafer fabrication processes are reviewed for their applicability to low-cost, high-performance RF front ends for emerging wireless LAN applications at 2.4 and 5.8 GHz. Wafer fabrication cost, yield, integration density, DC power consumption and electrical performance are compared for GaAs MESFET, GaAs heterostructure bipolar transition (HBT), GaAs high-electron-mobility transistor (HEMT), Si bipolar-junction transistor (BJT), and Si BiCMOS processes. Representative RF block diagrams and key performance and interface requirements are discussed. Applicable FCC regulations, modulation methods, and chip packaging issues are summarized
Keywords :
BiCMOS integrated circuits; MMIC; Schottky gate field effect transistors; bipolar integrated circuits; field effect integrated circuits; high electron mobility transistors; integrated circuit technology; local area networks; 2.4 GHz; 5.8 GHz; BiCMOS processes; DC power consumption; FCC regulations; GaAs; HEMT; MESFET; MMIC; RF front ends; Si; bipolar-junction transistor; chip packaging; electrical performance; fabrication cost; heterostructure bipolar transition; high-electron-mobility transistor; high-frequency IC wafer fabrication; integration density; modulation methods; wireless LAN; yield; Application specific integrated circuits; Costs; Energy consumption; Fabrication; Gallium arsenide; HEMTs; MESFETs; Radio frequency; Radiofrequency integrated circuits; Wireless LAN;
Conference_Titel :
Wireless LAN Implementation, 1992. Proceedings., IEEE Conference on
Conference_Location :
Dayton, OH
Print_ISBN :
0-8186-2625-9
DOI :
10.1109/CWLAN.1992.275719
