1652218

Porosity content dependence of TDDB lifetime and flat band voltage shift by cu diffusion in porous spin-on low-k

Hwang, Sang-Soo ; Lee, Hee-Chan ; Ro, Hyun Wook ; Yoon, Do Yeung ; Joo, Young-Chang

Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea

2005

474

477

copper; dielectric materials; diffusion; electric potential; integrated circuit interconnections; integrated circuit reliability; porosity; porous materials; semiconductor device breakdown; semiconductor device reliability; 1.51 eV; Cu; TDDB lifetime; activation energy; capacitance voltage measurements; copper diffusion; flat band voltage shift; interconnect reliability; porogen contents; porosity content dependence; porous dielectric; porous spin-on low-k dielectric; positronium annihilation lifetime spectroscopy; time dependent dielectric breakdown; Capacitance measurement; Capacitance-voltage characteristics; Dielectric breakdown; Dielectric materials; Dielectric measurements; Nanoporous materials; Optical films; Semiconductor materials; Testing; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493131

1493131