Title :
Vth fluctuation suppression and high performance of HfSiON/metal gate stacks by controlling capping-Y2O3 layers for 22nm bulk devices
Author :
Kamiyama, Satoshi ; Kurosawa, Etsuo ; Abe, Shoji ; Kitajima, Masashi ; Aminaka, Toshio ; Aoyama, Takayuki ; Ikeda, Kazuto ; Ohji, Yuzuru
Author_Institution :
Res. Dept.1, Semicond. Leading Edge Technol. (Selete), Inc., Tsukuba, Japan
Abstract :
We have succeeded in suppressing random threshold voltage (Vth) fluctuations by controlling capping-layers and high-k materials with metal gate first stacks for 22 nm-node devices. By employing 1-2 mono Y2O3-layers on HfSiON films, Vth fluctuations are the same as with non-capped samples, while maintaining excellent Vth controllability (|¿Vth| > 180 mV). Furthermore, the devices exhibit high device performance because ultra-thin equivalent-oxide-thickness (EOT: 0.74 nm) can be achieved with high electron carrier mobility, and very high drain current (Ion > 1060 ¿A/¿m) at an Ioff value of 100 nA/¿m.
Keywords :
carrier mobility; field effect transistors; fluctuations; hafnium compounds; high-k dielectric thin films; yttrium compounds; HfSiON-Y2O3; capping-layers; drain current; electron carrier mobility; fluctuation suppression; high-k materials; metal gate stacks; random threshold voltage; size 22 nm; ultra-thin equivalent-oxide-thickness; Atherosclerosis; Channel bank filters; Controllability; FETs; Fluctuations; Hafnium; High K dielectric materials; High-K gate dielectrics; Semiconductor films; Voltage control;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424333
