Vth fluctuation suppression and high performance of HfSiON/metal gate stacks by controlling capping-Y2O3 layers for 22nm bulk devices

Author

Kamiyama, Satoshi ; Kurosawa, Etsuo ; Abe, Shoji ; Kitajima, Masashi ; Aminaka, Toshio ; Aoyama, Takayuki ; Ikeda, Kazuto ; Ohji, Yuzuru

Author_Institution

Res. Dept.1, Semicond. Leading Edge Technol. (Selete), Inc., Tsukuba, Japan

fYear

2009

Firstpage

1

Lastpage

4

Abstract

We have succeeded in suppressing random threshold voltage (V_th) fluctuations by controlling capping-layers and high-k materials with metal gate first stacks for 22 nm-node devices. By employing 1-2 mono Y₂O₃-layers on HfSiON films, V_th fluctuations are the same as with non-capped samples, while maintaining excellent V_th controllability (|Â¿V_th| > 180 mV). Furthermore, the devices exhibit high device performance because ultra-thin equivalent-oxide-thickness (EOT: 0.74 nm) can be achieved with high electron carrier mobility, and very high drain current (I_on > 1060 Â¿A/Â¿m) at an I_off value of 100 nA/Â¿m.

Keywords

carrier mobility; field effect transistors; fluctuations; hafnium compounds; high-k dielectric thin films; yttrium compounds; HfSiON-Y₂O₃; capping-layers; drain current; electron carrier mobility; fluctuation suppression; high-k materials; metal gate stacks; random threshold voltage; size 22 nm; ultra-thin equivalent-oxide-thickness; Atherosclerosis; Channel bank filters; Controllability; FETs; Fluctuations; Hafnium; High K dielectric materials; High-K gate dielectrics; Semiconductor films; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424333

Filename

5424333