1652316

Impact of buried capping layer on TDDB physics of advanced interconnects

Yiang, K.Y. ; Yoo, W.J. ; Krishnamoorthy, Ahila ; Tang, L.J.

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

2005

490

494

buried layers; copper; electric breakdown; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; silicon compounds; tantalum; 100 Å; 105 degC; 800 Å; Cu-SiOC; Ta; barrier rupture; buried capping layer thickness effects; capping layer interface; failure mechanisms; interconnect TDDB physics; interconnect electrical reliability; lifetime performance degradation; low-k dielectrics; remnant hardmask; thermomechanical stress; time-dependent dielectric breakdown; Dielectric breakdown; Dielectric materials; Etching; Fabrication; Physics; Plasma applications; Plasma chemistry; Plasma materials processing; Silicon; Transistors;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493134

1493134