Filament study of STI type drain extended NMOS device using transient interferometric mapping

Author

Shrivastava, Mayank ; Bychikhin, S. ; Pogany, D. ; Schneider, Jens ; Baghini, M. Shojaei ; Gossner, Harald ; Gornik, Erich ; Rao, V. Ramgopal

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India

fYear

2009

Firstpage

1

Lastpage

4

Abstract

We present filament behavior of STI type DeNMOS devices using detailed Transient Interferometric Mapping experiments and 3D TCAD simulations. Device behavior at different TLP currents is discussed. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative NPN action and various events during the current filamentation are explored. By uniform turn-on of the device during base push-out the failure current could be improved by more than 2X.

Keywords

CMOS integrated circuits; space charge; technology CAD (electronics); 3D TCAD simulations; STI type drain extended NMOS device; current filamentation; failure current; localized base-push-out; power dissipation; regenerative NPN action; space charge build-up; transient interferometric mapping; CMOS technology; Current density; Current distribution; Electric breakdown; Fingers; Impact ionization; MOS devices; Nanoelectronics; Solid state circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424337

Filename

5424337