Author :
Reddy, V. ; Barton, N. ; Martin, S. ; Hung, C.-M. ; Krishnan, A. ; Chancellor, C. ; Sundar, S. ; Tsao, A. ; Corum, D. ; Yanduru, N. ; Madhavi, S. ; Akhtar, S. ; Pathak, N. ; Srinivasan, P. ; Shichijo, S. ; Benaissa, K. ; Roy, A. ; Chatterjee, T. ; Taylor,
Author_Institution :
Texas Instrum., Dallas, TX, USA
Abstract :
The impact of deep sub-micron CMOS transistor reliability on RF oscillator phase noise degradation is demonstrated along with the importance of off-state drain stress for large signal RF applications. Process and device optimization was successful in reducing phase noise degradation to acceptable levels.
Keywords :
oscillators; phase noise; reliability; transistors; RF oscillator phase noise degradation; complementary metal-oxide-semiconductor; deep submicron CMOS transistor reliability; device optimization; off-state drain stress; signal RF applications; Degradation; Digital control; Frequency conversion; Local oscillators; Phase noise; RF signals; Radio frequency; Stress; Transmitters; Voltage control;
