1652513

A new drain voltage enhanced NBTI degradation mechanism

Jha, Neeraj K. ; Reddy, P. Sahajananda ; Rao, V. Ramgopal

Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India

2005

524

528

MOSFET; interface states; semiconductor device reliability; thermal stability; H; PMOS transistor reliability; device channel length; drain bias stress; drain voltage enhanced NBTI degradation mechanism; generated hydrogen species diffusion; high temperature stress; negative bias temperature instability; nonuniform interface state generation; pMOSFET; short channel devices; threshold voltage degradation; Charge measurement; Current measurement; Degradation; MOSFET circuits; Niobium compounds; Pulse measurements; Stress measurement; Temperature; Threshold voltage; Titanium compounds;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493140

1493140