Title :
Differences in ac-analysis of Si/Si1-xGex HBTs using drift-diffusion and hydrodynamic based device simulators
Author :
Förster, H. ; Nuernbergk, D. ; Schwierz, F. ; Schipanski, D.
Author_Institution :
Inst. of Solid State Electron., Tech. Hochschule Ilmenau, Germany
Abstract :
This paper reports the differences in 2D device-level simulation based on drift-diffusion-ac and hydrodynamic-ac analysis of SiGe-HBTs. Different Ge profiles were simulated to determine the influence of nonstationary transport effects on device performance. A comparison between the two models is useful in order to estimate the differences of both models in device structure optimizing processes
Keywords :
Ge-Si alloys; diffusion; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; silicon; 2D device-level simulation; HBTs; Si-SiGe; device structure optimizing processes; drift-diffusion based device simulators; hydrodynamic based device simulators; nonstationary transport effects; Analytical models; Computational modeling; Doping profiles; Electrons; Equations; Frequency; Heterojunction bipolar transistors; High definition video; Hydrodynamics; Solid modeling;
Conference_Titel :
Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on
Conference_Location :
Caracas
Print_ISBN :
0-7803-2672-5
DOI :
10.1109/ICCDCS.1995.499145
