• DocumentCode
    1652548
  • Title

    Differences in ac-analysis of Si/Si1-xGex HBTs using drift-diffusion and hydrodynamic based device simulators

  • Author

    Förster, H. ; Nuernbergk, D. ; Schwierz, F. ; Schipanski, D.

  • Author_Institution
    Inst. of Solid State Electron., Tech. Hochschule Ilmenau, Germany
  • fYear
    1995
  • Firstpage
    208
  • Lastpage
    211
  • Abstract
    This paper reports the differences in 2D device-level simulation based on drift-diffusion-ac and hydrodynamic-ac analysis of SiGe-HBTs. Different Ge profiles were simulated to determine the influence of nonstationary transport effects on device performance. A comparison between the two models is useful in order to estimate the differences of both models in device structure optimizing processes
  • Keywords
    Ge-Si alloys; diffusion; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; silicon; 2D device-level simulation; HBTs; Si-SiGe; device structure optimizing processes; drift-diffusion based device simulators; hydrodynamic based device simulators; nonstationary transport effects; Analytical models; Computational modeling; Doping profiles; Electrons; Equations; Frequency; Heterojunction bipolar transistors; High definition video; Hydrodynamics; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on
  • Conference_Location
    Caracas
  • Print_ISBN
    0-7803-2672-5
  • Type

    conf

  • DOI
    10.1109/ICCDCS.1995.499145
  • Filename
    499145
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652548