1652561

The contribution of HFO₂ bulk oxide traps to dynamic NBTI in pMOSFETs

Zhu, B. ; Suehle, J.S. ; Voge, E. ; Bernstein, J.B.

Dept. of Mech. Eng., Maryland Univ., College Park, MD, USA

2005

533

537

MOSFET; dielectric thin films; frequency response; hafnium compounds; interface states; semiconductor device reliability; thermal stability; CMOS reliability; CMOS scaling; HfO₂; SiO₂; bulk oxide traps; device lifetime extrapolation; dynamic NBTI; high-k gate dielectrics; interface traps; negative bias temperature instability; pMOSFET gate dielectrics; pulsed bias stress conditions; pulsed stress frequency response; threshold voltage shift; voltage acceleration parameters; Degradation; Dielectric substrates; Hafnium oxide; MOSFETs; Negative bias temperature instability; Niobium compounds; Stress; Testing; Threshold voltage; Titanium compounds;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493142

1493142