• DocumentCode
    1652623
  • Title

    Short and long-term safe operating area considerations in LDMOS transistors

  • Author

    Hower, Philip L. ; Pendharkar, Sameer

  • Author_Institution
    Mixed-Signal Technol. Dev., Texas Instruments, Manchester, UK
  • fYear
    2005
  • Firstpage
    545
  • Lastpage
    550
  • Keywords
    hot carriers; impact ionisation; power MOSFET; thermal stability; LDMOS transistors; electrical SOA; electrical stress; high-voltage MOS transistors; hot carrier SOA; hot carrier injection; impact ionization; lateral DMOS transistors; long-term safe operating area; power-handling transistors; short-term safe operating area; thermal SOA; thermal instability; thermal runaway; Breakdown voltage; CMOS technology; Hot carriers; Impact ionization; Instruments; MOS devices; MOSFETs; Semiconductor optical amplifiers; Testing; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493145
  • Filename
    1493145
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652623