DocumentCode
1652697
Title
Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide
Author
Chen, Jone F. ; Wu, Kuo-Ming ; Lin, Kaung-Wan ; Su, Yan-Kuin ; Hsu, S.L.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear
2005
Firstpage
560
Lastpage
564
Keywords
hot carriers; power MOSFET; semiconductor device reliability; 40 V; AC lifetime; DC lifetime; Kirk effect; degradation recovery mechanism; high-voltage LDMOS; hot-carrier reliability; thick gate oxide LDMOS transistors; Application specific integrated circuits; Cost function; Degradation; Electrical resistance measurement; Hot carriers; Kirk field collapse effect; MOSFETs; Microelectronics; Semiconductor device manufacture; Semiconductor device reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493148
Filename
1493148
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