1652701

Electrical characteristics and reliability of extended drain voltage NMOS devices with multi-RESURF junction

Vashchenko, V.A. ; Brisbin, D. ; Lindorfer, P. ; Chaparala, P. ; Hopper, P.

Nat. Semicond. Corp., Santa Clara, CA, USA

2005

565

572

hot carriers; power MOSFET; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; LDMOS breakdown; NMOS device reliability; NMOS electrical characteristics; diluted junction method; electrical degradation; hot carrier degradation; lateral extended drain voltage NMOS; multiple RESURF junction; reduced surface field method; Auditory displays; Automotive engineering; Breakdown voltage; CMOS process; CMOS technology; Costs; Degradation; Electric variables; Hot carriers; MOS devices;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493149

1493149