• DocumentCode
    1652733
  • Title

    99-μm-long-cavity laser diode using highly stacked InGaAs quantum dots

  • Author

    Tanoue, F. ; Sugawara, H. ; Akahane, K. ; Yamamoto, N.

  • Author_Institution
    Grad. Sch. of Syst. Design, Tokyo Metropolitan Univ., Hino, Japan
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We fabricated a 99-μm-long-cavity broad-area laser diode involving 19 stacked InGaAs quantum dots, which lased at 1013 nm without any HR coating, and the threshold current density was 2.25 kA/cm2.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical fabrication; semiconductor lasers; semiconductor quantum dots; HR coating; InGaAs; laser diode; quantum dots; size 99 mum; wavelength 1013 nm; Cavity resonators; Diode lasers; Indium gallium arsenide; Laser mode locking; Quantum dot lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6325625
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652733