• DocumentCode
    1652770
  • Title

    Reliability assessment of deep trench isolation structures

  • Author

    Moens, P. ; Coppens, P. ; Baele, J. ; Bauwens, F. ; Boonen, S. ; De Vleeschouwer, H. ; De Pestel, F. ; Tack, M.

  • Author_Institution
    AMI Semicond. Belgium BVBA, Oudenaarde, Belgium
  • fYear
    2005
  • Firstpage
    573
  • Lastpage
    577
  • Keywords
    integrated circuit reliability; interface states; isolation technology; power integrated circuits; semiconductor device reliability; deep trench isolation structures; interface states; reliability; reverse bias stress; smart power; variable base level charge pumping technique; Ambient intelligence; Charge pumps; Degradation; Driver circuits; Implants; Isolation technology; Silicon; Stress; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493150
  • Filename
    1493150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652770