• DocumentCode
    1652875
  • Title

    Fast reliability evaluation of backend dielectrics using lifetime prediction techniques at wafer level

  • Author

    Hong, Changsoo ; Milor, Linda ; Lin, M.Z. ; Hsu, W.M. ; Peng, Yeng

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2005
  • Firstpage
    588
  • Lastpage
    589
  • Keywords
    correlation methods; dielectric materials; leakage currents; life testing; semiconductor device breakdown; semiconductor device reliability; accelerated life testing; backend dielectrics; breakdown signature parameters; device lifetime prediction techniques; homogeneous correlation technique; near-time-zero leakage current data; ramped voltage stress test; reliability evaluation; time dependent dielectric breakdown test; wafer level; Computer aided manufacturing; Current measurement; Dielectric measurements; Electric breakdown; Fabrication; Leakage current; Life testing; Stress; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493156
  • Filename
    1493156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652875