DocumentCode
1652898
Title
Hot carrier reliability in GaAs PHEMT MMIC power amplifiers
Author
Chou, Y.C. ; Grundbacher, R. ; Lai, R. ; Li, G.P. ; Kan, Q. ; Yu, M. ; Callejo, L. ; Leung, D. ; Eng, D. ; Block, T. ; Oki, A.
Author_Institution
Northrop Grumman Space Technol., Redondo Beach, CA, USA
fYear
2005
Firstpage
590
Lastpage
591
Keywords
HEMT integrated circuits; MMIC power amplifiers; electric current; gallium arsenide; hot carriers; impact ionisation; integrated circuit reliability; life testing; power HEMT; semiconductor device reliability; 0.15 micron; GaAs; HEMT MMIC power amplifiers; drain current; gallium arsenide; gate current; hot carrier reliability; hot carrier stress testing; impact ionization; long-term lifetest; output power; output power degradation; transconductance; Degradation; Gallium arsenide; Hot carriers; Impact ionization; MMICs; PHEMTs; Power amplifiers; Power generation; Space technology; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493157
Filename
1493157
Link To Document