• DocumentCode
    1652911
  • Title

    Gate oxide reliability of 4H-SiC MOS devices

  • Author

    Krishnaswami, Sumi ; Das, Mrinal ; Hull, Brett ; Ryu, Sei-Hyung ; Scofield, James ; Agarwal, Anant ; Palmour, John

  • Author_Institution
    Cree Inc, Durham, NC, USA
  • fYear
    2005
  • Firstpage
    592
  • Lastpage
    593
  • Keywords
    MOS capacitors; power MOSFET; semiconductor device reliability; silicon compounds; surface morphology; 4H-silicon carbide MOS devices; MOS capacitors; SiC; activated surface; applied gate voltage; as-grown epi surface; gate oxide reliability; high temperature gate oxide breakdown measurements; implant damage; ion-implanted surface; power MOSFET; surface morphology deterioration; Dielectric breakdown; Electric breakdown; MOS capacitors; MOS devices; MOSFETs; Power system reliability; Silicon carbide; Surface morphology; Temperature dependence; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493158
  • Filename
    1493158
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652911