1652911

Gate oxide reliability of 4H-SiC MOS devices

Krishnaswami, Sumi ; Das, Mrinal ; Hull, Brett ; Ryu, Sei-Hyung ; Scofield, James ; Agarwal, Anant ; Palmour, John

Cree Inc, Durham, NC, USA

2005

592

593

MOS capacitors; power MOSFET; semiconductor device reliability; silicon compounds; surface morphology; 4H-silicon carbide MOS devices; MOS capacitors; SiC; activated surface; applied gate voltage; as-grown epi surface; gate oxide reliability; high temperature gate oxide breakdown measurements; implant damage; ion-implanted surface; power MOSFET; surface morphology deterioration; Dielectric breakdown; Electric breakdown; MOS capacitors; MOS devices; MOSFETs; Power system reliability; Silicon carbide; Surface morphology; Temperature dependence; Threshold voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493158

1493158