Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires

Author

Tachi, K. ; Casse, M. ; Jang, D. ; Dupré, C. ; Hubert, A. ; Vulliet, N. ; Maffini-Alvaro, V. ; Vizioz, C. ; Carabasse, C. ; Delaye, V. ; Hartmann, J.-M. ; Ghibaudo, G. ; Iwai, H. ; Cristoloveanu, S. ; Faynot, O. ; Ernst, T.

Author_Institution

CEA-LETI, MINATEC, Grenoble, France

fYear

2009

Firstpage

1

Lastpage

4

Abstract

For the first time, interface properties between high-k and Si or SiGe nanowires (NWs) have been experimentally investigated by adapting charge pumping technique and low-frequency noise measurement. It is found that the interface state density (D_it) of circular Si NWs is ~3 times higher than that of rectangular ones with a deleterious impact on the low field mobility. The oxide trap density in SiGe NWs is otherwise ~3.5 times higher than that of Si NWs which limits the mobility enhancement for this material.

Keywords

CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; high-k dielectric thin films; nanowires; semiconductor materials; silicon; transistors; Si; SiGe; charge pumping technique; circular Si NW; high-k interface properties; interface state density; low field mobility; low-frequency noise measurement; mobility enhancement; Charge measurement; Charge pumps; Current measurement; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; Low-frequency noise; Nanowires; Noise measurement; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424360

Filename

5424360