• DocumentCode
    1652930
  • Title

    Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

  • Author

    Samanta, Piyas ; Man, Tsz Yin ; Chan, Alain Chun Keung ; Zhang, Qingchun ; Zhu, Chunxiang ; Chan, Mansun

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
  • fYear
    2005
  • Firstpage
    594
  • Lastpage
    595
  • Keywords
    MIS devices; MOS capacitors; dielectric thin films; leakage currents; silicon compounds; stress effects; tantalum compounds; tunnelling; MOS capacitors; SiO2; TaN; constant current; constant voltage; direct tunneling stress-induced leakage current; metal-oxide-silicon capacitors; nMOS devices; negative bias; silicon dioxide films; tantalum nitride; ultrathin gate oxides; Capacitance-voltage characteristics; Conductive films; Electron traps; Leakage current; MOS capacitors; MOS devices; Silicon compounds; Stress; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493159
  • Filename
    1493159
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652930