• DocumentCode
    1652967
  • Title

    A comprehensive solution for ultra-thin oxide reliability issue including a novel explanation of power-law exponent variations

  • Author

    Kang, Ting-Kuo ; Shieh, Jerry ; Lo, Oswin ; Chen, Ju-Ping ; Lin, Cheng-Li ; Su, K.C.

  • Author_Institution
    Q&RA/RE/Oxide United Microelectron. Corp., Hsin-Chu, Taiwan
  • fYear
    2005
  • Firstpage
    596
  • Lastpage
    597
  • Keywords
    MOSFET; dielectric thin films; nitridation; nitrogen; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; 65 nm; CMOS technologies; MOSFET; N; dielectric potential barrier; gate oxide nitrogen concentration; gate oxide voltage acceleration; high voltage operation; nFET; nitridation; oxide breakdown; pFET; power law exponent; power-law exponent variations; ultra-thin oxide reliability; voltage acceleration power law modeling; Anodes; CMOS technology; Degradation; Dielectrics; Electric breakdown; Nitrogen; Plasma devices; Protons; Semiconductor device modeling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493160
  • Filename
    1493160
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652967