• DocumentCode
    1652973
  • Title

    Experimental assessment of self-heating in SOI FinFETs

  • Author

    Scholten, A.J. ; Smit, G.D.J. ; Pijper, R.M.T. ; Tiemeijer, L.F. ; Tuinhout, H.P. ; van der Steen, J.-L.P.J. ; Mercha, A. ; Braccioli, M. ; Klaassen, D.B.M.

  • Author_Institution
    NXP-TSMC Res. Centre, Eindhoven, Netherlands
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, it is shown that self-heating causes a gigantic effect on the capacitances of MOSFETs/FinFETs. The effect is used to determine the SOI FinFET thermal impedance and to determine the temperature rise during FinFET operation.
  • Keywords
    MOSFET; silicon-on-insulator; thermal conductivity measurement; SOI FinFET; self-heating; temperature rise; thermal impedance; Capacitance; FinFETs; Frequency; Impedance; MOSFETs; Pulse measurements; Space vector pulse width modulation; Temperature; Thermal conductivity; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424362
  • Filename
    5424362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652973