SPICE model development for SiC power MOSFET

SiC Power MOSFETs show a tremendous potential for high voltage, high temperature, high-power and high-frequency power electronic applications. A simplified SPICE model is proposed for the SiC Power MOSFET, CMF20120D, based on the understanding of the power MOSFET discrete devices terminal behavior. The aim of the model development is to reuse the available built-in MOSFET models of the regular lateral MOS devices in the commercial SPICE simulators and propose a new model to depict the same behavior as expected by SiC device. The advantage of such model is the limited number of required parameters, which can readily be extracted from simple external terminal measurements or from standard datasheets. The results of simulation and comparison with real device measurement show appreciable closeness with the datasheet.