Title :
A new model for the post-breakdown conductance of MOS devices based on the generalized diode equation
Author :
Miranda, Enrique
Author_Institution :
Departament d´´Enginyeria Electronica, Autonomous Univ. of Barcelona, Bellaterra, Spain
Keywords :
MIS devices; semiconductor device breakdown; semiconductor device models; 5 nm; Lambert W function; MOS devices; conductance-voltage characteristic; diode series resistance; gate oxide post-breakdown conductance; generalized diode equation; inter-electrode contact effect; low bias operating range; quantum point contact model; Contact resistance; Dielectrics; Diodes; Electric breakdown; Electric resistance; Electrodes; Electronic mail; Equations; MOS devices; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493161
