1653018

Direct observation of trap behaviors during degradation and breakdown evolution in highly stressed SiO₂ films by conductive atomic force microscopy

Zhang, Li ; Mitani, Yuichiro

Corp. Res. Dev. Center, Toshiba Corp., Kawasaki, Japan

2005

600

601

atomic force microscopy; dielectric thin films; electric breakdown; electron traps; silicon compounds; CAFM; FN-stress-induced trap behavior; SiO₂; conductive atomic force microscopy; dielectric breakdown evolution; dielectric film degradation; electron trap generation; highly stressed films; negative charge detrapping; transient current component; trap behavior direct observation; trap centers/cathode substrate charge movement; trap defects lateral propagation; Atomic force microscopy; Conductive films; Degradation; Dielectric breakdown; Electric breakdown; Electron traps; Probes; Stress; Substrates; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493162

1493162