DocumentCode
1653026
Title
A model for reverse short-channel effects in MOSFETs
Author
Narayanan, R. ; Ortiz-Conde, A. ; Liou, J.J. ; Golovanova, L. ; Wong, W. ; Garcia Sánchez, F.J.
Author_Institution
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
fYear
1995
Firstpage
294
Lastpage
297
Abstract
A model for reverse short-channel effects of the threshold voltage is presented by adding two separate n-regions around the source and drain regions of a p-channel MOSFET. Two-dimensional simulations with MEDICI of this modified p-channel MOSFET verifies this model. Experimental evidence of the reverse short-channel effects is also found. The errors inherent to the method for extracting the threshold voltage are shown not to be responsible for the reverse short-channel effects
Keywords
MOSFET; semiconductor device models; MEDICI; model; p-channel MOSFET; reverse short-channel effects; threshold voltage; two-dimensional simulations; Chaos; Large Hadron Collider; MOSFETs; Medical simulation; Numerical simulation; SPICE; Silicides; Testing; Threshold voltage; Virtual colonoscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on
Conference_Location
Caracas
Print_ISBN
0-7803-2672-5
Type
conf
DOI
10.1109/ICCDCS.1995.499163
Filename
499163
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