1653046

Exponential dependence of percolation resistance on gate voltage and its impacts on progressive breakdown

Lo, V.L. ; Pey, K.L. ; Tung, C.H. ; Ang, D.S. ; Tang, L.J.

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

2005

602

603

MOSFET; dielectric thin films; percolation; semiconductor device breakdown; MOSFET; catastrophic failure; gate dielectric defect density; localized heating; parasitic resistances; percolation resistance degradation; percolation resistance gate voltage dependence; progressive breakdown hardness; ultrathin gate dielectrics; Breakdown voltage; Degradation; Dielectric breakdown; Dielectric substrates; Electric resistance; Electrical resistance measurement; Leakage current; MOSFETs; Microelectronics; Stress measurement;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493163

1493163