DocumentCode
1653046
Title
Exponential dependence of percolation resistance on gate voltage and its impacts on progressive breakdown
Author
Lo, V.L. ; Pey, K.L. ; Tung, C.H. ; Ang, D.S. ; Tang, L.J.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2005
Firstpage
602
Lastpage
603
Keywords
MOSFET; dielectric thin films; percolation; semiconductor device breakdown; MOSFET; catastrophic failure; gate dielectric defect density; localized heating; parasitic resistances; percolation resistance degradation; percolation resistance gate voltage dependence; progressive breakdown hardness; ultrathin gate dielectrics; Breakdown voltage; Degradation; Dielectric breakdown; Dielectric substrates; Electric resistance; Electrical resistance measurement; Leakage current; MOSFETs; Microelectronics; Stress measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493163
Filename
1493163
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