Title :
Demonstration of scaled 0.099µm2 FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology
Author :
Veloso, A. ; Demuynck, S. ; Ercken, M. ; Goethals, A.M. ; Locorotondo, S. ; Lazzarino, F. ; Altamirano, E. ; Huffman, C. ; De Keersgieter, A. ; Brus, S. ; Demand, M. ; Struyf, H. ; De Backer, J. ; Hermans, J. ; Delvaux, C. ; Baudemprez, B. ; Vandeweyer, T
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
We demonstrate electrically functional 0.099 μm2 6T-SRAM cells using full-field EUV lithography for contact and M1 levels. This enables formation of dense arrays without requiring any OPC/RET, while exhibiting substantial process latitudes & potential lower cost of ownership (single-patterning). Key enablers include: 1) high-k/metal gate FinFETs with Lg˜40 nm, 12-17 nm wide Fins, and cell β ratio ˜1.3; 2) option for using an extension-less approach, advantageous for reducing complexity with 2 less I/I photos, and for enabling a better quality, defect-free growth of Si-epitaxial raised S/D; 3) use of double thin-spacers and ultra-thin silicide; 4) optimized W metallization for filling high aspect-ratio, ⩾30 nm-wide contacts. SRAM cell with SNM≫10%VDD down to 0.4V, and healthy electrical characteristics for the cell transistors [SS˜80 mV/dec, DIBL˜50-80 mV/V, and |VTlin|⩾0.2 V (PMOS), VTlin˜0.36 V (NMOS)] are reported.
Keywords :
MOSFET circuits; SRAM chips; elemental semiconductors; integrated circuit metallisation; nanopatterning; semiconductor epitaxial layers; silicon; tungsten; ultraviolet lithography; NMOS; PMOS; Si; W; cell transistors; defect-free growth; dense arrays; double thin-spacers; extension-less approach; full-field EUV lithography; high-k-metal gate FinFET; metallization; scaled FinFET 6T-SRAM cell; single-patterning; ultrathin silicide; Contacts; Costs; Filling; FinFETs; High K dielectric materials; High-K gate dielectrics; Lithography; Metallization; Random access memory; Silicides;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424365
