• DocumentCode
    1653078
  • Title

    Device degradation model for stacked-ONO gate structure with using sonos and MOS transistors

  • Author

    Yi, Jeong-Hyong ; Jin-Hong Ahn ; Shin, Hyungcheol ; Park, Young-lune ; Min, Hong Shick

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci. & NSI-NCRC, Seoul Nat. Univ., South Korea
  • fYear
    2005
  • Firstpage
    604
  • Lastpage
    605
  • Keywords
    MOSFET; charge injection; impact ionisation; interface states; leakage currents; semiconductor device models; tunnelling; Fowler-Nordheim stress; MOS transistors; SONOS transistor degradation rate; anode hole injection; anode holes tunneling; device degradation model; electron tunneling; gate leakage current; hole fluence; impact ionization; interface trap density; polarity dependence; single-oxide gate structures; stacked-ONO gate structure; Anodes; CMOS technology; Degradation; Electron traps; MOSFETs; Nonvolatile memory; SONOS devices; Silicon; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493164
  • Filename
    1493164
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653078