1653078

Device degradation model for stacked-ONO gate structure with using sonos and MOS transistors

Yi, Jeong-Hyong ; Jin-Hong Ahn ; Shin, Hyungcheol ; Park, Young-lune ; Min, Hong Shick

Sch. of Electr. Eng. & Comput. Sci. & NSI-NCRC, Seoul Nat. Univ., South Korea

2005

604

605

MOSFET; charge injection; impact ionisation; interface states; leakage currents; semiconductor device models; tunnelling; Fowler-Nordheim stress; MOS transistors; SONOS transistor degradation rate; anode hole injection; anode holes tunneling; device degradation model; electron tunneling; gate leakage current; hole fluence; impact ionization; interface trap density; polarity dependence; single-oxide gate structures; stacked-ONO gate structure; Anodes; CMOS technology; Degradation; Electron traps; MOSFETs; Nonvolatile memory; SONOS devices; Silicon; Stress; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493164

1493164