• DocumentCode
    1653147
  • Title

    Design and characterization of a novel high voltage power supply ESD protection

  • Author

    Reynders, K. ; Moens, P. ; Wojciechowski, D. ; Tack, M.

  • Author_Institution
    AMI Semicond. Belgium BVBA, Oudenaarde, Belgium
  • fYear
    2005
  • Firstpage
    610
  • Lastpage
    611
  • Keywords
    MOS integrated circuits; bipolar transistor circuits; electrostatic discharge; power integrated circuits; protection; bipolar snapback; high voltage VDMOS; high voltage power supply ESD protection; hybrid active clamp; latch-up safety; parasitic vertical bipolar transistor; smart power; vertical double-diffused MOS; Bipolar transistors; Breakdown voltage; Circuits; Clamps; Electronic ballasts; Electrostatic discharge; MOSFETs; Power supplies; Protection; Turning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493167
  • Filename
    1493167
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653147