• DocumentCode
    1653246
  • Title

    Study of silicon-nitride induced damage on thin gate oxide

  • Author

    Dong, Walden ; Zhou, Joyce ; Liao, Scott ; Niou, Chomg ; Chien, W. T Kary

  • Author_Institution
    Reliability Div., SMIC, Shanghai, China
  • fYear
    2005
  • Firstpage
    616
  • Lastpage
    617
  • Keywords
    CMOS logic circuits; failure analysis; integrated circuit reliability; isolation technology; semiconductor device reliability; silicon; silicon compounds; stress effects; 0.15 micron; CMOS logic process; IC process; Si; SiN; failure analysis; nitride silicate; reliability; shallow trench isolation etching step; silicon process qualification; silicon substrate; silicon-nitride induced damage; stress; substrate; thin gate oxide integrity; CMOS logic circuits; CMOS process; Etching; Failure analysis; Performance evaluation; Scanning electron microscopy; Silicon; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493170
  • Filename
    1493170
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653246