Title :
Scalability of TiN/HfAlO/TiN MIM DRAM capacitor to 0.7-nm-EOT and beyond
Author :
Mise, N. ; Tonomura, O. ; Sekiguchi, T. ; Horii, S. ; Itatani, H. ; Ogawa, A. ; Saito, T. ; Sakai, M. ; Takebayashi, Y. ; Yamazaki, H. ; Torii, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We have proposed guiding principle of material selection of electrode/dielectric combination for MIM DRAM capacitors by theoretically taking the tunneling barrier height into account. Accordingly, we found that phase-controlled HfO2 (HfAlO) with TiN electrode is promising. TiN/HfAlO/TiN MIM capacitors with an ultra-thin Al2O3 on the bottom TiN electrode were fabricated and an EOT of 0.7 nm with a leakage current of 80 nA/cm2 was successfully achieved.
Keywords :
DRAM chips; MIM devices; alumina; capacitors; hafnium compounds; leakage currents; titanium compounds; tunnelling; Al2O3; EOT; HfO2; MIM DRAM capacitor; MIM capacitors; TiN electrode; TiN-HfAlO-TiN; electrode/dielectric combination; leakage current; size 0.7 nm; tunneling barrier height; Dielectric materials; Electrodes; Leakage current; MIM capacitors; Permittivity; Random access memory; Scalability; Tin; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424373
