1653296

Physical mechanism of high resistance of tungsten plug as a root cause of low yield and reliability issue in deep-sub-micron Si technology

Zhang, W. ; Tan, K.T.

Syst. on Silicon Manuf. Co. Pre. Ltd, Singapore, Singapore

2005

620

621

ULSI; aluminium compounds; electric resistance; etching; integrated circuit interconnections; integrated circuit reliability; integrated circuit yield; outgassing; semiconductor device reliability; tungsten; AlF₃; Si; ULSI device interconnects; W; capacitance increase; circuit reliability; deep-sub-micron Si technology; fluorine-containing polymer residue; interconnection complexity; lamp de-gas; multilayer design; multilayer fabrication; operating frequency; post-etch cleaning; post-etch treatment processes; tungsten plug resistance; vacuum bake; via etching; voltage drop; yield; Artificial intelligence; Etching; Failure analysis; Integrated circuit interconnections; Ohmic contacts; Plugs; Polymers; Tin; Tungsten; US Department of Energy;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493172

1493172