DocumentCode :
1653329
Title :
Investigation of localized breakdown spots in thin SiO2 using scanning capacitance microscopy
Author :
Wang, S.D. ; Chang, M.N. ; Chen, C.Y. ; Lei, T.F.
Author_Institution :
Inst. of Electron., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
fYear :
2005
Firstpage :
622
Lastpage :
623
Keywords :
MIS devices; MOS capacitors; capacitance; scanning probe microscopy; silicon compounds; surface morphology; MOS capacitor; MOS devices; SiO2; contact-mode atomic force microscopy images; differential capacitance signals; localized breakdown spots; metal-oxide-semiconductor devices; oxide breakdown sites; scanning capacitance microscopy; scanning probe microscope; surface morphology; thin silica; Atomic force microscopy; Capacitance; Electric breakdown; Laboratories; MOS capacitors; Maintenance; Rough surfaces; Surface morphology; Surface roughness; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
Type :
conf
DOI :
10.1109/RELPHY.2005.1493173
Filename :
1493173
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1653329
بازگشت