1653353

Junction leakage induced by silicon dislocation in a 0.13micron logic process

Rock, C.J. ; Lin, James Y C ; Dong, Walden ; Guo, Annie ; Liao, Scott ; Niou, Chorng ; Chien, Kary

Reliability Div., Semicond. Manuf. Int. (Shanghai) Corp, Shanghai, China

2005

624

625

SRAM chips; dislocations; failure analysis; focused ion beam technology; integrated circuit yield; integrated logic circuits; leakage currents; p-n junctions; transmission electron microscopy; 0.13 micron; SRAM; lightly-doped drain; logic process; p-n junction leakage; silicon dislocation; static-random access memory; technology qualification vehicle; yield-limiting defect; Circuit testing; Contacts; Failure analysis; Focusing; Ion beams; Logic; P-n junctions; Random access memory; Silicon; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493174

1493174