DocumentCode
1653403
Title
Breakdown and conduction mechanisms of ALD HfSiON dielectric with TaN gate using carrier separation analysis
Author
Seok Joo Doh ; Lee, Jung Hyoung ; Kim, Jong Pyo ; Lee, Jong-Ho ; Kim, Yun-Seok ; Lim, Ha-Jin ; Jung, Hyung-Suk ; Han, Sung Kee ; Kim, Min Joo ; Lee, Nae-In ; Kang, Ho-Kyu ; Park, Seong Geon ; Kang, Sang Bom
Author_Institution
Adv. Process Dev. Project, Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
fYear
2005
Firstpage
630
Lastpage
631
Keywords
MOSFET; atomic layer deposition; dielectric thin films; electron traps; hafnium compounds; leakage currents; semiconductor device breakdown; semiconductor device reliability; tantalum compounds; tunnelling; ALD; Fowler-Nordheim tunneling; HfSiON-TaN; MOSFET; SILC condition; carrier separation analysis; conduction band edge; dielectric breakdown mechanisms; dielectric conduction mechanisms; electron trap generation; electron tunneling current; gate leakage current; high-k gate dielectric reliability; hole current; soft breakdown; unstressed dielectric; Annealing; Charge carrier processes; Dielectric breakdown; Dielectric substrates; Electric breakdown; Electrons; Leakage current; Semiconductor films; Stress; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493177
Filename
1493177
Link To Document