• DocumentCode
    1653426
  • Title

    Influence of gate material and stress voltage on post breakdown leakage current of high K dielectrics

  • Author

    Duschl, Rainer ; Kerber, M. ; Schroeder, U. ; Hecht, T. ; Jakschik, S. ; Kapteyn, C. ; Kudelka, S.

  • Author_Institution
    Infineon Technol., Munich, Germany
  • fYear
    2005
  • Firstpage
    632
  • Lastpage
    633
  • Keywords
    circuit reliability; dielectric thin films; electric breakdown; leakage currents; Al2O3; DC dielectric reliability testing; SILC; breakdown formation finite threshold energy; electrode material; gate material effects; high-k dielectrics reliability; layer thickness; metal electrodes; post breakdown current limitation; post breakdown leakage current; stable breakdown phases; stress voltage effects; Breakdown voltage; Capacitors; Dielectric breakdown; Electrodes; FETs; High K dielectric materials; High-K gate dielectrics; Leakage current; Stress; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493178
  • Filename
    1493178
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653426