DocumentCode
1653446
Title
Spin transport in single- and multi-layer graphene
Author
Shiraishi, Masashi
Author_Institution
Grad. Sch. of Eng. Sci., Osaka Univ., Toyonaka, Japan
fYear
2009
Firstpage
1
Lastpage
4
Abstract
In this talk, the author introduced novel findings on spin transport in graphene spin valves. It is found out that spin polarization of injected spins in graphene is very robust for a bias voltage and it is extremely better than that of the other molecular and metallic spin valves, which could be an important breakthrough for expanding device designing for realization of graphene-based spin MOSFETs.
Keywords
MOSFET; graphene; magnetoelectronics; spin polarised transport; spin valves; spin-orbit interactions; C; field effect transistors; graphene electronics; graphene spin valves; multilayer graphene; nuclear spin; single-layer graphene; spin MOSFET; spin current; spin injection; spin polarization; spin transport; spin-orbit interaction; Anisotropic magnetoresistance; Electrodes; FETs; Magnetic field measurement; Polarization; Robustness; Spin polarized transport; Spin valves; Tunneling magnetoresistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4244-5639-0
Electronic_ISBN
978-1-4244-5640-6
Type
conf
DOI
10.1109/IEDM.2009.5424377
Filename
5424377
Link To Document