• DocumentCode
    1653447
  • Title

    Threshold voltage instability of HFSiO dielectric MOSFET under pulsed stress

  • Author

    Choi, Rino ; Harris, R. ; Lee, B.H. ; Young, C.D. ; Sim, J.H. ; Matthews, K. ; Pendley, M. ; Bersuker, G.

  • Author_Institution
    SEMATECH, Austin, TX, USA
  • fYear
    2005
  • Firstpage
    634
  • Lastpage
    635
  • Keywords
    MOSFET; dielectric relaxation; dielectric thin films; hafnium compounds; semiconductor device measurement; semiconductor device reliability; 10E-1 sec; AC stress on/off time; HfSiO; MOSFET; NMOSFET; charge distribution stability; charge redistribution; charge trapping; high-k gate dielectrics; off-time relaxation; pulsed stress reliability test; stress rise/fall time; threshold voltage instability; Circuit simulation; Dielectric devices; Frequency; Hafnium; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Pulse circuits; Stress; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493179
  • Filename
    1493179
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653447