Development of graphene FETs for high frequency electronics

Author

Lin, Yu-Ming ; Jenkins, Keith ; Farmer, Damon ; Valdes-Garcia, Alberto ; Avouris, Phaedon ; Sung, Chun-Yung ; Chiu, Hsin-Ying ; Ek, Bruce

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2009

Firstpage

1

Lastpage

4

Abstract

Recent advances in fabricating, measuring, and modeling of top-gated graphene FETs for high-frequency electronics are reviewed. By improving the oxide deposition process and reducing series resistance, an intrinsic cut-off frequency as high as 50 GHz is achieved in a 350-nm-gate graphene FET at a drain bias of 0.8 V. This f_T value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOSFETs at the same gate length, illustrating the potential of graphene for RF applications.

Keywords

field effect transistors; field effect transistor; graphene transistor; high frequency electronics; intrinsic cut off frequency; oxide deposition process; series resistance; size 350 nm; top gated graphene FET; voltage 0.8 V; Circuit synthesis; Current measurement; Cutoff frequency; Density measurement; Electrical resistance measurement; FETs; Frequency measurement; Gain measurement; MOSFETs; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424378

Filename

5424378