Title :
Graphene for VLSI: FET and interconnect applications
Author_Institution :
Keio Univ., Hiyoshi, Japan
Abstract :
Because of their remarkable physical properties, graphene should be one of the most important Emerging Research Materials (ERM) for not only the front-end but also back-end devices of VLSIs for the next decade. In this paper, we discuss the present status of their material technologies and some issues to be addressed for realizing graphene channels and wiring devices for a future LSI.
Keywords :
VLSI; field effect transistors; graphene; interconnections; C; FET; VLSI; back-end devices; emerging research materials; graphene channels; interconnect applications; material technologies; wiring devices; CMOS technology; FETs; Fabrication; III-V semiconductor materials; Integrated circuit interconnections; Large scale integration; Materials science and technology; Organic materials; Temperature; Very large scale integration;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424381
